A Methodology for Deep Sub-Quartermicron CMOS Technology Characterization
نویسندگان
چکیده
We present a novel methodology for characterization of sub-quartermicron CMOS technologies. It involves process calibration, device calibration employing twodimensional device simulation and automated Technology Computer Aided Design (TCAD) optimization, and, finally, transient mixed-mode device/circuit simulation. The proposed methodology was tested on 0.25 m technology and applied to 0.13 m technology in order to estimate ring oscillator speed. The simulation results show an excellent agreement with available experimental data.
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تاریخ انتشار 2001